Epitaxy and characterization of GaInP/AlInP light-emitting diodes on As-doped Ge/Si substrates-Reference-Cited by-同舟云学术

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Epitaxy and characterization of GaInP/AlInP light-emitting diodes on As-doped Ge/Si substrates

Published:2016-09-26 Issue:20 Volume:24 Page:23129
ISSN:1094-4087
Container-title:Optics Express
language:en
Short-container-title:Opt. Express

Author:

Wang Cong,Wang Bing,Lee Kwang Hong,Tan Chuan Seng,Yoon Soon Fatt,Michel Jurgen

Funder

National Research Foundation Singapore (NRF)

Singapore-MIT Alliance for Research and Technology Centre (SMART)

Publisher

The Optical Society

Subject

Atomic and Molecular Physics, and Optics

Reference13 articles.

1. Highly efficient InGaN/GaN blue LED on 8-inch Si (111) substrate

2. Monolithic CMOS-compatible AlGaInP visible LED arrays on silicon on lattice-engineered substrates (SOLES)

3. Integration of GaAs, GaN, and Si-CMOS on a common 200 mm Si substrate through multilayer transfer process

4. Visible-Light Communications Using a CMOS-Controlled Micro-Light- Emitting-Diode Array

5. High-performance Ge-on-Si photodetectors

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1. Lasing by Template‐Assisted Self‐Assembled Quantum Dots;Advanced Optical Materials;2023-01-17

2. Parameterized optical properties of InxAl1-xP alloys;Applied Optics;2020-03-19

3. Effects of Ge substrate on the structural and optical conductivity parameters of Bi2O3 thin films;Optik;2019-03

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