Laser-induced damage threshold of the nonlinear crystals BaGa4Se7 and BaGa2GeSe6 at 2091 nm in the nanosecond regime-Reference-Cited by-同舟云学术

Laser-induced damage threshold of the nonlinear crystals BaGa4Se7 and BaGa2GeSe6 at 2091 nm in the nanosecond regime

Published:2020-08-18 Issue:9 Volume:37 Page:2655
ISSN:0740-3224
Container-title:Journal of the Optical Society of America B
language:en
Short-container-title:J. Opt. Soc. Am. B

Author:

Kostyukova Nadezhda Yu.^ORCID,Boyko Andrey A.,Eranov Ilya D.,Antipov Oleg L.^ORCID,Kolker Dmitry B.,Kostyukov Anton I.,Erushin Evgenii Yu.,Miroshnichenko Ilya B.,Badikov Dmitrii V.,Badikov Valeriy V.

Funder

Russian Foundation for Basic Research

Russian Science Foundation

Publisher

The Optical Society

Subject

Atomic and Molecular Physics, and Optics,Statistical and Nonlinear Physics

Reference12 articles.

1. Phase-matching properties of BaGa4 S7 and BaGa4 Se7 : Wide-bandgap nonlinear crystals for the mid-infrared

2. Crystal growth and characterization of new quaternary chalcogenide nonlinear crystals for the mid-IR: BaGa_2GeS_6 and BaGa_2GeSe_6

3. Widely tunable (2.6–10.4μm) BaGa4Se7optical parametric oscillator pumped by a Q-switched Nd:YLiF4laser

4. Laser-induced damage threshold of BaGa4Se7 and BaGa2GeSe6 nonlinear crystals at 1053 μm

5. 36 W Q-switched Ho:YAG laser at 2097 nm pumped by a Tm fiber laser: evaluation of different Ho3+doping concentrations

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