Effects of polarization field distribution on photoelectric properties of InGaN light-emitting diodes-Reference-Cited by-同舟云学术

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Effects of polarization field distribution on photoelectric properties of InGaN light-emitting diodes

Published:2014-08-12 Issue:9 Volume:4 Page:1848
ISSN:2159-3930
Container-title:Optical Materials Express
language:en
Short-container-title:Opt. Mater. Express

Author:

Dang Suihu,Li Chunxia,Sun Pei,Jia Wei,Li Tianbao,Xu Bingshe

Funder

National Natural Science Foundation of China (NSFC)

Publisher

The Optical Society

Subject

Electronic, Optical and Magnetic Materials

Reference26 articles.

1. Status and Future of High-Power Light-Emitting Diodes for Solid-State Lighting

2. Solid-State Light Sources Getting Smart

3. High Power LEDs - Technology Status and Market Applications

4. Illumination with solid state lighting technology

5. Application of light-emitting diodes in bioreactors: Flashing light effects and energy economy in algal culture (Chlorella pyrenoidosa)

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Correlation between performance and compositional grading in quantum well of deep UV-LED;Optik;2020-05

2. On the optical and microstrain analysis of graded InGaN/GaN MQWs based on plasma assisted molecular beam epitaxy;Optical Materials Express;2016-05-23

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