Author:
Tanksalvala Michael,Esashi Yuka,Porter Christina L.,Jenkins Nicholas W.,Wang Bin,Zhang Zhe,Miley Galen P.,Horiguchi Naoto,Yazdi Sadegh,Liao Chen-Ting,Gerrity Michael,Kapteyn Henry C.,Murnane Margaret M.
Abstract
A grand challenge in semiconductor metrology has been the nondestructive characterization 3D nanostructures and their multilayer structure, interfaces, and dopant concentrations. We combine extreme ultraviolet reflectometry with state-of-the-art ptychography imaging algorithms to achieve this goal.