Passive Q switching of Nd:YAG lasers by use of bulk semiconductors
Author:
Publisher
The Optical Society
Subject
Atomic and Molecular Physics, and Optics
Reference4 articles.
1. Pulsed YAG:Nd3+laser with a passiveQswitch in the form of an LiF crystal containing $F^-_2$ centers
2. Passive mode locking andQswitching of an erbium 3 μm laser using thin InAs epilayers grown by molecular beam epitaxy
3. Room temperature excitonic nonlinear absorption and refraction in GaAs/AlGaAs multiple quantum well structures
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1. High Power and Short Pulse Width Operation of Passively Q-Switched Er:Lu2O3 Ceramic Laser at 2.7 μm;Applied Sciences;2018-05-16
2. An extended application of β-Ga2O3 single crystals to the laser field: Cr4+:β-Ga2O3 utilized as a new promising saturable absorber;RSC Advances;2017
3. 57 mJ with 10 ns passively Q-switched diode pumped Nd:YAG laser using Cr4+:YAG crystal;Optical and Quantum Electronics;2015-12-19
4. Diode-pumped passively Q-switched Nd:GGG laser with a Bi-doped GaAs semiconductor saturable absorber;Optics Communications;2014-12
5. Microchip lasers;Handbook of Solid-State Lasers;2013
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