Bonded thin film lithium niobate modulator on a silicon photonics platform exceeding 100 GHz 3-dB electrical modulation bandwidth-Reference-Cited by-同舟云学术

Bonded thin film lithium niobate modulator on a silicon photonics platform exceeding 100 GHz 3-dB electrical modulation bandwidth

Published:2018-08-29 Issue:18 Volume:26 Page:23728
ISSN:1094-4087
Container-title:Optics Express
language:en
Short-container-title:Opt. Express

Author:

Weigel Peter O.,Zhao Jie,Fang Kelvin,Al-Rubaye Hasan,Trotter Douglas,Hood Dana,Mudrick John,Dallo Christina,Pomerene Andrew T.,Starbuck Andrew L.,DeRose Christopher T.,Lentine Anthony L.,Rebeiz Gabriel,Mookherjea Shayan

Funder

National Science Foundation (NSF)

U.S. Department of Energy (DOE)

Publisher

The Optical Society

Subject

Atomic and Molecular Physics, and Optics

Reference46 articles.

1. Millimeter-wave Ti:LiNbO/sub 3/ optical modulators

2. Room-temperature bonding of lithium niobate and silicon wafers by argon-beam surface activation

3. Room temperature bonding of silicon and lithium niobate

4. Hybrid amorphous silicon (a-Si:H)–LiNbO3 electro-optic modulator

5. Hybrid silicon and lithium niobate electro-optical ring modulator

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