Abstract
We numerically investigate the figures of merit for single-photon emission in a planar GaAs-on-insulator waveguide featuring a V-groove geometry. Thanks to a field enhancement effect arising due to boundary conditions of this waveguide, the structure features an ultra-small mode area enabling a factor of a maximum 2.8 times enhancement of the Purcell factor for quantum dot and a more significant 7 times enhancement for the atomic-size solid-state emitters with the aligned dipole orientation. In addition, the coupling efficiency to the fundamental quasi-TE mode is also improved. To take into account potential on-chip integration, we further show that the V-groove mode profile can be converted using a tapering section to the mode profile of a standard ridge waveguide while maintaining both the high Purcell factor and the good fundamental mode coupling efficiency.
Funder
Horizon 2020 Framework Programme
Danmarks Frie Forskningsfond
European Research Council
Subject
Atomic and Molecular Physics, and Optics