Investigation of perfect narrow-band absorber in silicon nano hole array

Abstract

In this paper, we proposed a triple layer structure consisting of the bottom silver layer, thin silicon oxide space layer, and ultrathin semiconductor silicon film with nano hole array achieving three absorption peaks with narrow band. The absorption spectrum can be easily controlled by adjusting the structural parameters including the radius and period of the nano hole array, and the maximal absorption can reach 99.0% and the narrowest full width of half maximum can reach about 6.5 nm in theory. We also clarified the physical mechanism of the proposed structure in details by finite-difference time-domain simulation, in which the three narrow band perfect adsorption peaks can be attributed to electric dipole resonance, magnetic dipole resonance and plasmonic resonance respectively. At the same time, we used a low-cost nanosphere lithography method to fabricate the proposed nano hole array in large area. In experiment, the absorption peak of the proposed triple layer structure can reach up to 98.3% and the narrowest full width of half maximum can reach up to about 10.1 nm. The highest quality factor Q can reach up to 98.4. This work can open a new avenue for high-quality factor narrow band perfect absorption using ultrathin semiconductor film and benefit for many fields such as infrared sensors, plasmonic filters, and hyperspectral imaging.