Affiliation:
1. RWTH Aachen University TOS—Chair for Technology of Optical Systems
2. JARA—Fundamentals of Future Information Technology
Abstract
Modern semiconductor structures reach sizes in the nanometer regime.
Optical metrology characterizes test structures for the quality
assessment of semiconductor fabrication. The limits of radiation to
resolve nanometer structure sizes can be overcome by shortening the
wavelength. The compact source extreme ultraviolet (EUV) scatterometer
presented here characterizes samples in the EUV spectral range using
plasma radiation. Reference measurements with synchrotron radiation
are carried out using a beamline scatterometer. A comparison including
Markov chain Monte Carlo sampling shows that the compact source and
beamline setups can both determine the given dimensional parameters of
a nanoscale grating with uncertainties in the sub-nanometer range.
Grating characterization based on soft
x
ray scattering has increased
accuracy.
Funder
H2020 Leadership in Enabling and
Industrial Technologies
European Metrology Programme for
Innovation and Research
Subject
Atomic and Molecular Physics, and Optics,Engineering (miscellaneous),Electrical and Electronic Engineering
Cited by
6 articles.
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