Electrically Injected GeSn Laser Operating up to 135 K

Abstract

We demonstrated electrically injected GeSn laser with the threshold of 800 A/cm2 at 77 K. The decreased threshold compared to previous results was achieved by reducing optical loss and improving the optical confinement. The peak power was measured as 1.25 mW/facet at 77 K. At 135 K, the emission peak is at 2656 nm.