Electrically injected GaN-on-Si blue microdisk laser diodes

Author:

Tang Yongjun12ORCID,Feng Meixin1234,Zhao Hanru12,Wang Jin2,Liu Jianxun234ORCID,Sun Xiujian23,Sun Qian1234,Zhang Shuming123,Yang Hui123

Affiliation:

1. University of Science and Technology of China

2. Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO)

3. Guangdong Institute of Semiconductor Micro-nano Manufacturing Technology

4. Jiangxi Institute of Nanotechnology

Abstract

III-nitride blue microdisk laser diodes are highly desirable in emerging applications, such as augmented reality, virtual reality, and visible light communication. However, the electrically pumped blue microdisk lasers have been lagging for decades owing to weak optical confinement and large internal absorption loss. In this study, the waveguide layers and cladding layers were carefully engineered to enhance the optical confinement and reduce internal absorption loss. Therefore, the first electrically injected blue microdisk laser diodes grown on Si substrates have been successfully fabricated, and exhibited a resistor-capacitance-limited bandwidth of 24.1 GHz, showing highly promising applications in high-speed and large-modulation-bandwidth visible light communication.

Funder

Guangdong Province Key-Area Research and Development Program

National Key Research and Development Program of China

National Natural Science Foundation of China

Jiangxi Double Thousand Plan

Strategic Priority Research Program of CAS

Key Research Program of Frontier Sciences, CAS

Bureau of International Cooperation, CAS

Key R&D Program of Jiangsu Province

Suzhou Science and Technology Program

Publisher

Optica Publishing Group

Subject

Atomic and Molecular Physics, and Optics

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