Ge/SiGe asymmetric Fabry-Perot quantum well electroabsorption modulators-Reference-Cited by-同舟云学术

Ge/SiGe asymmetric Fabry-Perot quantum well electroabsorption modulators

Published:2012-12-17 Issue:28 Volume:20 Page:29164
ISSN:1094-4087
Container-title:Optics Express
language:en
Short-container-title:Opt. Express

Author:

Edwards Elizabeth H.,Audet Ross M.,Fei Edward T.,Claussen Stephanie A.,Schaevitz Rebecca K.,Tasyurek Emel,Rong Yiwen,Kamins Theodore I.,Harris James S.,Miller David A. B.

Publisher

The Optical Society

Subject

Atomic and Molecular Physics, and Optics

Reference34 articles.

1. Device Requirements for Optical Interconnects to Silicon Chips

2. Silicon optical modulators

3. Waveguide-integrated, ultralow-energy GeSi electro-absorption modulators

4. High speed GeSi electro-absorption modulator at 1550 nm wavelength on SOI waveguide

5. Quantum-Confined Stark Effect in Ge/SiGe Quantum Wells on Si for Optical Modulators

Cited by 22 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. FDTD analysis of direct optical integration between SiNx waveguides and Ge/SiGe multiple quantum wells on graded buffer for low-voltage optical modulators around the O-band wavelength;Results in Optics;2024-02

2. Y-Z cut lithium niobate longitudinal piezoelectric resonant photoelastic modulator;Optics Express;2022-12-12

3. Ge/SiGe多量子阱调制器的研究进展;Laser & Optoelectronics Progress;2022

4. Efficient Electroabsorption Modulation of Mid- and Far-Infrared Radiation by Driving the Band-Inversion Transition of InAs / GaSb Type-II Quantum Wells;Physical Review Applied;2021-12-22

5. Taking silicon photonics modulators to a higher performance level: state-of-the-art and a review of new technologies;Advanced Photonics;2021-04-29