Affiliation:
1. Electronics and Telecommunications Research Institute (ETRI)
Abstract
Even though it is in high demand to introduce a nano-structure (NS) light extraction technology on a silicon nitride to be used as a thin film encapsulation material for an organic light-emitting diode (OLED), only an industry-incompatible wet method has been reported. This work demonstrates a double-layer NS fabrication on the silicon nitride using a two-step organic vapor phase deposition (OVPD) of an industry-compatible dry process. The NS showed a wrinkle-like shape caused by coalescence of the nano-lenses. The NS integrated top-emitting OLED revealed 40 percent enhancement of current efficiency and improvement of the luminance distribution and color change according to viewing angle.
Funder
Electronics and Telecommunications Research Institute
Development of the Technologies for ICT Materials, Components and Equipment
Subject
Atomic and Molecular Physics, and Optics
Cited by
4 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献