Silicon modulator based on omni junctions by effective 3D Monte-Carlo method

Author:

Zhu Zijian12,Zhao Yingxuan1ORCID,Huang Haiyang1,Li Yang12,She Xiaojuan12,Zhu Junbo12,Liao Han12,Liu Xiang12,Huang Rui12,Liu Hongbao12,Sheng Zhen1,Gan Fuwan12

Affiliation:

1. Chinese Academy of Sciences

2. University of Chinese Academy of Sciences

Abstract

3D doping structure has significant advantages in modulation efficiency and loss compared with 2D modulator doping profiles. However, to the best of our knowledge, previous work on 3D simulation methods for interdigitated doping designs applied simplified models, which prohibited complex 3D doping. In this work, innovative omni junctions, based on the effective 3D Monte-Carlo method, are believed to be the first proposed for high-performance modulators. Simulation results show that the modulation efficiency reaches 0.88 V·cm, while the loss is only 16 dB/cm, with capacitance below 0.42 pF/mm. This work provides a modulator design with superior modulation efficiency and serviceability for high-speed datacom.

Funder

National Key Research and Development Program of China

National major scientific research instrument development project

Shanghai Sailing Program

Publisher

Optica Publishing Group

Subject

Atomic and Molecular Physics, and Optics

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