035 μm CMOS avalanche photodiode with high responsivity and responsivity–bandwidth product
Author:
Publisher
The Optical Society
Subject
Atomic and Molecular Physics, and Optics
Reference9 articles.
1. A 5-Gb/s OEIC with voltage-up-converter
2. Hole-Injection-Type and Electron-Injection-Type Silicon Avalanche Photodiodes Fabricated by Standard 0.18-$\mu$m CMOS Process
3. 3-GHz Silicon Photodiodes Integrated in a 0.18-$\mu$m CMOS Technology
4. Effect of Deep N-Well Bias in an 850-nm Si Photodiode Fabricated Using the CMOS Process
5. A silicon avalanche photodetector fabricated with standard CMOS technology with over 1 THz gain-bandwidth product
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