Ultraviolet enhanced responsivity of silicon photodiodes: an investigation-Reference-Cited by-同舟云学术

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Ultraviolet enhanced responsivity of silicon photodiodes: an investigation

Published:1977-06-01 Issue:6 Volume:16 Page:1539
ISSN:0003-6935
Container-title:Applied Optics
language:en
Short-container-title:Appl. Opt.

Author:

Schaefer A. R.

Publisher

The Optical Society

Reference2 articles.

1. Silicon photodetector instabilities in the uv

2. Determination of surface state parameters from surface photovoltage transients: CdS

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Ultraviolet detection properties of electrodeposited n-SnO2 modified p-Si nanowires hetero-junction photodiode;Journal of Materials Science: Materials in Electronics;2019-03-29

2. Characterization of UV-induced radiation damage to Si-based photodiodes;SPIE Proceedings;1999-09-28

3. Quantum efficiency stability of silicon photodiodes;Applied Optics;1987-12-15

4. Surface effects and grain‐boundary domination in thin‐film Zn3P2photoconductivity;Journal of Applied Physics;1986-06-15

5. Significant photodiode quantum efficiency improvement and spectral response alteration through surface effects in vacuum;IEEE Transactions on Electron Devices;1984-09

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