Affiliation:
1. University of the Chinese Academy of Sciences
2. Chinese Academy of Sciences
Abstract
Raman lasing can be a promising way to generate highly coherent chip-based lasers, especially in high-quality (high-Q) crystalline microcavities. Here, we measure the fundamental linewidth of a stimulated Raman laser in an aluminum nitride (AlN)-on-sapphire microcavity with a record Q-factor up to 3.7 million. An inverse relationship between fundamental linewidth and emission power is observed. A limit of the fundamental linewidth, independent of Q-factor, due to Raman-pump-induced Kerr parametric oscillation is derived.
Funder
National Natural Science Foundation of China
National Key Research and Development Program of China
State Key Laboratory of Advanced Optical Communication Systems and Networks
Subject
Atomic and Molecular Physics, and Optics
Cited by
4 articles.
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