InP-based short-wave infrared and midwave infrared photodiodes using a novel type-II strain-compensated quantum well absorption region
Author:
Publisher
The Optical Society
Subject
Atomic and Molecular Physics, and Optics
Reference15 articles.
1. Lasers and photodetectors for mid-infrared 2–3 μm applications
2. Mid-Infrared Chemical Sensors Utilizing Plasma-Deposited Fluorocarbon Membranes
3. Some applications of NIR tunable diodes for remote sensing
4. A long-wavelength photodiode on InP using lattice-matched GaInAs-GaAsSb type-II quantum wells
5. 2.4 [micro sign]m cutoff wavelength avalanche photodiode on InP substrate
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1. High-Performance InP-Based Bias-Tunable Near-Infrared/Extended-Short Wave Infrared Dual-Band Photodetectors;Journal of Lightwave Technology;2022-08-01
2. InP-Based Extended-Short Wave Infrared Heterojunction Phototransistor;Journal of Lightwave Technology;2021-07
3. Recent Advances in High Speed Photodetectors for eSWIR/MWIR/LWIR Applications;Photonics;2021-01-11
4. Room temperature operation and low dark current of In0.15Ga0.85As/InAs/In0.15Ga0.85As dot-in-well short-wave infrared photodetector: Experimental and theoretical correlation;Superlattices and Microstructures;2020-12
5. InAs/InAsSb Type-II Strained-Layer Superlattice Infrared Photodetectors;Micromachines;2020-10-26
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