Diode-pumped Tm3+,Ho3+ co-doped GAGG mode-locking laser near the 2.1μm wavelength region

Author:

Zhao Yuantao1,Li Yang1,Zhao Shengzhi1,Liu Yizhou1,Li Tao1,Hu Ping1,Mao Jiajia1,Yang Kejian1ORCID,Wang Chun1,Feng Tianli1

Affiliation:

1. Shandong University

Abstract

In this paper, a laser diode (LD) pumped passive mode-locking Tm,Ho:GAGG laser based on a semiconductor saturable absorber mirror (SESAM) is reported. By adjusting the group delay dispersions inside the laser cavity and transmissions of the output couplers (OCs), a shortest pulse duration of 10.84 ps at 2089.9 nm is achieved, the average output power is 33.17 mW and the laser runs at a 83.01 MHz repetition rate. A maximum average output power of 66.43 mW is also obtained at 2089.9 nm with a pulse duration of 16.56 ps by using an OC of 3%. To the best of our knowledge, this is the first report on the mode-locking Tm,Ho:GAGG laser.

Funder

Natural Science Foundation of Shandong Province

National Natural Science Foundation of China

Qilu Young Scholar Program of Shandong University

Taishan Scholar Foundation of Shandong Province

High-level Talent Cultivation Funds of State Key Laboratory of Crystal Materials of Shandong University

Funds of Basic Research Operations of Shandong University

Publisher

Optica Publishing Group

Subject

Atomic and Molecular Physics, and Optics

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