Author:
Kohli Manuel,Chelladurai Daniel,Kulmer Laurenz,Messner Andreas,Keller Killian,Blatter Tobias,Winiger Joel,Moor David,Buriakova Tatiana,Zervas Michael,Convertino Clarissa,Eltes Felix,Fedoryshyn Yuriy,Koch Ueli,Leuthold Juerg
Abstract
We demonstrate the first O-band BaTiO3-plasmonic modulator on SiN. Featuring symbol rates of up to 200 GBd, 2 dB on-chip loss, and 70 GHz bandwidth, this approach proves suitable for low-loss, high-speed, and low-complexity communication.