Electrically pumped lasing from Ge Fabry-Perot resonators on Si-Reference-Cited by-同舟云学术

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Electrically pumped lasing from Ge Fabry-Perot resonators on Si

Published:2015-05-28 Issue:11 Volume:23 Page:14815
ISSN:1094-4087
Container-title:Optics Express
language:en
Short-container-title:Opt. Express

Author:

Koerner Roman,Oehme Michael,Gollhofer Martin,Schmid Marc,Kostecki Konrad,Bechler Stefan,Widmann Daniel,Kasper Erich,Schulze Joerg

Funder

Deutsche Forschungsgemeinschaft (DFG)

Publisher

The Optical Society

Subject

Atomic and Molecular Physics, and Optics

Reference19 articles.

1. Silicon Photonics: A Review of Recent Literature

2. Prospects and challenges of silicon/germanium on-chip optoelectronics

3. Integrated germanium optical interconnects on silicon substrates

4. Recent progress in lasers on silicon

5. Room-temperature direct bandgap electroluminesence from Ge-on-Si light-emitting diodes

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1. Advancements and challenges in strained group-IV-based optoelectronic materials stressed by ion beam treatment;Journal of Physics: Condensed Matter;2024-07-26

2. Enhancement of room temperature electroluminescence from strained SiGe/Ge(111) multiple quantum wells light emitting diodes;Materials Science in Semiconductor Processing;2024-06

3. Anti-relaxation of tensile lattice strain in Si-embedded Ge strip structure for photonic device applications;Japanese Journal of Applied Physics;2024-02-16

4. All‐Around HfO₂ Stressor for Tensile Strain in GeSn‐on‐Insulator Nanobeam Lasers;Advanced Optical Materials;2023-09-27

5. Defect‐Engineered Electrically‐Injected Germanium‐on‐Insulator Waveguide Light Emitters at Telecom Wavelengths;Advanced Electronic Materials;2023-08-10

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