Easy method to measure the packaging-induced stress of a semiconductor laser diode by lasing wavelength shifting
Author:
Funder
National Natural Science Foundation of China
Publisher
The Optical Society
Subject
Atomic and Molecular Physics, and Optics,Engineering (miscellaneous),Electrical and Electronic Engineering
Reference18 articles.
1. Temperature and deformation dependence of output wavelength and polarization in laser diodes based on p-AlGaAs/GaAsP/n-AlGaAs nanostructures;Bogdanov,2017
2. Thermomechanical model for the plastic deformation in high power laser diodes during operation
3. Investigation of reliability issues in high power laser diode bar packages
4. Mounting-induced strain threshold for the degradation of high-power AlGaAs laser bars
5. Experimental validation of mechanical stress models by micro-Raman spectroscopy
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3. Influence of Strain on Performance of Independent Emitters in High Power Quasi-continuous Semiconductor Laser Array;ACTA PHOTONICA SINIC;2020
4. Method to control near-field bowing of laser diode arrays by balancing the thermal-induced stress;Optical Engineering;2020-03-09
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