Affiliation:
1. The 46th Research Institute, China Electronics Technology Group Corporation
Abstract
The effects of magnesium ion implantation and post-annealing on the photoelectric performance of a β-Ga2O3-based vertical structural Schottky photodetector (PD) were thoroughly investigated. After implantation and post-annealing, the Schottky barrier height and bandgap of the Ga2O3 surface can be slightly increased, while the dark current is significantly reduced, and the light-to-dark current ratio is immensely improved. The PD exhibited a photo-to-dark current ratio of 1733, responsivity of 5.04 mA/W, and specific detectivity of 3.979×1011 Jones under −2.6V bias, and the rise and decay times are 0.157 were 0.048 s, respectively. The large left shift of the open-circuit voltage is feasibly explained by applying the thermionic-emission diffusion theory.
Funder
National Natural Science Foundation of China
Subject
Atomic and Molecular Physics, and Optics,Engineering (miscellaneous),Electrical and Electronic Engineering
Cited by
1 articles.
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