High-efficiency InGaN-based LEDs grown on patterned sapphire substrates
Author:
Publisher
The Optical Society
Subject
Atomic and Molecular Physics, and Optics
Reference16 articles.
1. White-light emission from InGaN-GaN multiquantum-well light-emitting diodes with Si and Zn codoped active well layer
2. InGaN/GaN multiple quantum well light-emitting diodes with highly transparent Pt thin film contact on p-GaN
3. Enhanced performance of an InGaN–GaN light-emitting diode by roughening the undoped-GaN surface and applying a mirror coating to the sapphire substrate
4. Enhanced light output from a nitride-based power chip of green light-emitting diodes with nano-rough surface using nanoimprint lithography
5. Coalescence overgrowth of GaN nanocolumns on sapphire with patterned metal organic vapor phase epitaxy
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4. Improved wavelength stability and heat dissipation of InGaN-based light-emitting diodes using a graphene interlayer on patterned sapphire substrate;Applied Physics Letters;2023-05-15
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