Dominant UV emission from p-MgZnO/n-GaN light emitting diodes-Reference-Cited by-同舟云学术

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Dominant UV emission from p-MgZnO/n-GaN light emitting diodes

Published:2011-12-07 Issue:1 Volume:2 Page:38
ISSN:2159-3930
Container-title:Optical Materials Express
language:en
Short-container-title:Opt. Mater. Express

Author:

Xia Xiaochuan,Shen Rensheng,Liu Yuanda,Yang Dechao,Song Shiwei,Zhao Long,Shi Zhifeng,Li Xiangping,Liang Hongwei,Zhang Baolin,Du Guotong

Publisher

The Optical Society

Subject

Electronic, Optical and Magnetic Materials

Reference37 articles.

1. Atom probe analysis of interfacial abruptness and clustering within a single InxGa1−xN quantum well device on semipolar (101¯1¯) GaN substrate

2. High-Efficiency Blue and True-Green-Emitting Laser Diodes Based on Non-c-Plane Oriented GaN Substrates

3. Surface plasmon coupling with radiating dipole for enhancing the emission efficiency of a light-emitting diode

4. Surface plasmon dispersion engineering via double-metallic Au/Ag layers for III-nitride based light-emitting diodes

5. Approaches for high internal quantum efficiency green InGaN light-emitting diodes with large overlap quantum wells

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. GaN quality evolution according to carrier gas for the nucleation layer and buffer layer;Optical Materials Express;2019-03-27

2. Morphological, Structural and Optical Evolution of Ag Nanostructures on c-Plane GaN Through the Variation of Deposition Amount and Temperature;Metals and Materials International;2018-02-16

3. Theoretical simulation of Hybrid II-O/III-N green light-emitting diode with MgZnO/InGaN/MgZnO heterojunction;Materials Science in Semiconductor Processing;2015-03

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