Ho3+ doped low-phonon single crystals and chalcogenide glasses for mid-IR source application

Abstract

A comparative study was conducted to investigate the 3.9 µm mid-IR emission properties of Ho3+ doped NaYF4 and CsCdCl3 crystals as well as Ho3+ doped Ga2Ge5S13 glass. Following optical excitation at ∼890 nm, all the studied materials exhibited broad mid-IR emissions centered at ∼3.9 µm at room temperature. The mid-IR emission at 3.9 µm, originating from the 5I5 → 5I6 transition, showed long emission lifetime values of ∼16.5 ms and ∼1.61 ms for Ho3+ doped CsCdCl3 crystal and Ga2Ge5S13 glass, respectively. Conversely, the Ho3+ doped NaYF4 crystal exhibited a relatively short lifetime of ∼120 µs. Temperature dependent decay time measurements were performed for the 5I5 excited state for all three samples. The results showed that the emission lifetimes of Ho3+:CsCdCl3 and Ho3+:Ga2Ge5S13 were nearly temperature independent over the range studied, while significant emission quenching of the 5I5 level was observed in Ho3+:NaYF4. The temperature dependence of the multi-phonon relaxation rate for 3.9 µm mid-IR emission in Ho3+:NaYF4 crystal was determined. The room temperature stimulated emission cross-sections for all three samples were calculated using the Füchtbauer-Landenburg equation. Furthermore, the results of Judd-Ofelt analysis are presented and discussed.