Thin-film vertical-type AlGaInP LEDs fabricated by epitaxial lift-off process via the patterned design of Cu substrate-Reference-Cited by-同舟云学术

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Thin-film vertical-type AlGaInP LEDs fabricated by epitaxial lift-off process via the patterned design of Cu substrate

Published:2015-07-06 Issue:14 Volume:23 Page:18156
ISSN:1094-4087
Container-title:Optics Express
language:en
Short-container-title:Opt. Express

Author:

Wu Fan-Lei,Ou Sin-Liang,Kao Yu-Cheng,Chen Chun-Li,Tseng Ming-Chun,Lu Fang-Ching,Lin Ming-Tzer,Horng Ray-Hua

Funder

Ministry of Science and Technology (MOST)

Southern Taiwan Science Park and HsinChu Science Park, Taiwan

Epistar company

Publisher

The Optical Society

Subject

Atomic and Molecular Physics, and Optics

Reference11 articles.

1. LEDs challenge the incandescents

2. High-efficiency AlGaInP light-emitting diodes for solid-state lighting applications

3. High brightness AlGaInP light-emitting diodes

4. High-power truncated-inverted-pyramid (AlxGa1−x)0.5In0.5P/GaP light-emitting diodes exhibiting >50% external quantum efficiency

5. High-power AlGaInP light-emitting diodes with metal substrates fabricated by wafer bonding

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4. High Luminous Efficacy Phosphor-Converted Mass-Produced White LEDs Achieved by AlN Prebuffer and Transitional-Refraction-Index Patterned Sapphire Substrate;Nanomaterials;2022-05-11

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