Author:
Wang Yu,Bhat Srivathsa,Shi Bin,Aalto Timo,Calabretta Nicola
Abstract
We fabricated and assessed a wideband (C-/L- band) nanosecond 1×2 electro-optic switch in 3-µm thick silicon. Results show 2.5dB lowest insertion loss, 16dB averaged extinction ration, 2.5dB polarization dependent loss and 6-ns switching time.
Cited by
3 articles.
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