Octave-spanning supercontinuum generation in a CMOS-compatible thin Si3N4 waveguide coated with highly nonlinear TeO2

Author:

Mbonde Hamidu M.ORCID,Singh Neetesh1,Segat Frare Bruno L.ORCID,Sinobad Milan1ORCID,Ahmadi Pooya Torab,Hashemi Batoul,Bonneville Dawson B.,Mascher Peter,Kärtner Franz X.12ORCID,Bradley Jonathan D. B.ORCID

Affiliation:

1. University of Hamburg

2. Universität Hamburg

Abstract

Supercontinuum generation (SCG) is an important nonlinear optical process enabling broadband light sources for many applications, for which silicon nitride (Si3N4) has emerged as a leading on-chip platform. To achieve suitable group velocity dispersion and high confinement for broadband SCG the Si3N4 waveguide layer used is typically thick (>∼700 nm), which can lead to high stress and cracks unless specialized processing steps are used. Here, we report on efficient octave-spanning SCG in a thinner moderate-confinement 400-nm Si3N4 platform using a highly nonlinear tellurium oxide (TeO2) coating. An octave supercontinuum spanning from 0.89 to 2.11 µm is achieved at a low peak power of 258 W using a 100-fs laser centered at 1565 nm. Our numerical simulations agree well with the experimental results giving a nonlinear parameter of 2.5 ± 0.5 W−1m−1, an increase by a factor of 2.5, when coating the Si3N4 waveguide with a TeO2 film. This work demonstrates highly efficient SCG via effective dispersion engineering and an enhanced nonlinearity in CMOS-compatible hybrid TeO2–Si3N4 waveguides and a promising route to monolithically integrated nonlinear, linear, and active functionalities on a single silicon photonic chip.

Funder

Deutsche Forschungsgemeinschaft

Horizon 2020 Framework Programme

Optica Foundation

Mitacs

Canada Foundation for Innovation

Natural Sciences and Engineering Research Council of Canada

Ontario Ministry of Research and Innovation

Publisher

Optica Publishing Group

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