Effect of sputtering power on the physical properties of amorphous SiO2-doped InZnO transparent conductive oxide

Abstract

In order to control the optical and electrical properties of the transparent conductive oxide, the radio frequency (RF) sputtering power was changed from 30 to 40, 50, and 60 W. To optimize the power condition of the SiInZnO (SIZO) layer, we changed the sputtering power from 30 to 60 W, systematically. The chemical properties of the SIZO layer were analyzed using X-ray photoelectron spectroscopy (XPS). XPS proved that this change is dominant in thickness. In order to fabricate the SIZO transparent conducting oxide (TCO) with the optimized power of 50 W, the transmittance of 99.1% at 550 nm and the figure of merit of 12.4×10−3Ω−1 were obtained.