Abstract
In this paper, a CH3NH3(MA)PbBr3/Si heterojunction photodetector (PD) is prepared, and a simple method is proposed to improve the performance by introducing an ITO conductive layer and modulating thickness of the MAPbBr3 layer. The results indicate that the MAPbBr3/Si heterojunction PD exhibits an ultra-broadband photoresponse ranging from 405 to 1064 nm, and excellent performances with the responsivity (R) of 0.394 mA/W, detectivity (D) of 0.11×1010 Jones, and response times of ∼2176/∼257 ms. When adding the ITO layer, the R and D are greatly improved to 0.426 A/W and 5.17×1010 Jones, which gets an increment of 1.08×105% and 4.7×103%, respectively. Meanwhile, the response times are reduced to ∼130/∼125 ms, and a good environmental stability is obtained. Moreover, it is found that the photoresponse is strongly dependent on the thickness of the MAPbBr3 layer. By modulating the MAPbBr3 layer thickness from ∼85 to ∼590 nm, the performances are further improved with the best R of ∼0.87 A/W, D of ∼1.92×1011 Jones, and response times of ∼129/∼130 ms achieved in the ∼215 nm-thick PD.
Funder
Science and Technology Plan Project of Hebei Province
Nature Science Foundation of Hebei Province
National Natural Science Foundation of China
Subject
Atomic and Molecular Physics, and Optics
Cited by
15 articles.
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