High-efficiency near-infrared emission from Bismuth-doped SiO_073 thin films fabricated by ion implantation technology-Reference-Cited by-同舟云学术

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High-efficiency near-infrared emission from Bismuth-doped SiO_073 thin films fabricated by ion implantation technology

Published:2016-02-01 Issue:3 Volume:41 Page:630
ISSN:0146-9592
Container-title:Optics Letters
language:en
Short-container-title:Opt. Lett.

Author:

Lin Shaobing,Zhang Xiaowei,Zhang Pei,Tan Dameng,Xu Jun,Li Wei,Chen Kunji

Funder

973 program

National Natural Science Foundation of China (NSFC)

“333 Project” of Jiangsu Provence

Priority Academic Program Development of Jiangsu Higher Education Institutions

China Scholarship Council (CSC)

Publisher

The Optical Society

Subject

Atomic and Molecular Physics, and Optics

Reference33 articles.

1. Recent progress in lasers on silicon

2. Improved sensitization efficiency in Er3+ ions and SnO2 nanocrystals co-doped silica thin films

3. Infrared Luminescence from Bismuth-Doped Silica Glass

4. Enhanced broadband excited upconversion luminescence in Ho-doped glasses by codoping with bismuth

5. Regulation of structure rigidity for improvement of the thermal stability of near-infrared luminescence in Bi-doped borate glasses

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3. Near-ultraviolet excited Tm3+ and Dy3+ ions co-doped barium lanthanum silica oxide phosphors for white-light applications;Journal of Alloys and Compounds;2019-04

4. Structural transformations and spectroscopic properties of Ni-doped magnesium aluminosilicate glass-ceramics nucleated by a mixture of TiO2 and ZrO2 for broadband near-IR light emission;Journal of Alloys and Compounds;2019-04

5. Enhanced and wavelength-tunable near-infrared luminescence from bismuth-doped silica thin films with Au nanocrystals;Journal of Alloys and Compounds;2019-01

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