Up to 300 K lasing with GeSn-On-Insulator microdisk resonators

Abstract

GeSn alloys are the most promising direct band gap semiconductors to demonstrate full CMOS-compatible laser integration with a manufacturing from Group-IV materials. Here, we show that room temperature lasing, up to 300 K, can be obtained with GeSn. This is achieved in microdisk resonators fabricated on a GeSn-On-Insulator platform by combining strain engineering with a thick layer of high Sn content GeSn.