Micro-integrated high-power narrow-linewidth external-cavity tapered diode laser at 808 nm
Author:
Funder
Innovationsfonden
Eurostars
Publisher
The Optical Society
Subject
Atomic and Molecular Physics, and Optics,Engineering (miscellaneous),Electrical and Electronic Engineering
Reference31 articles.
1. Operating characteristics of a high-power monolithically integrated flared amplifier master oscillator power amplifier
2. High-brightness diode lasers
3. High-Brightness Quantum Well Tapered Lasers
4. Efficient, High Brightness 1030 nm DBR Tapered Diode Lasers With Optimized Lateral Layout
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4. Micro-integrated high-power narrow-linewidth external-cavity tapered diode laser at 762 nm for daylight imaging;Optics Communications;2022-07
5. Microsecond pulse-mode operation of a micro-integrated high-power external-cavity tapered diode laser at 808 nm;Applied Optics;2020-09-08
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