Crystalline GeSn growth by plasma enhanced chemical vapor deposition-Reference-Cited by-同舟云学术

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Crystalline GeSn growth by plasma enhanced chemical vapor deposition

Published:2018-09-26 Issue:10 Volume:8 Page:3220
ISSN:2159-3930
Container-title:Optical Materials Express
language:en
Short-container-title:Opt. Mater. Express

Author:

Dou Wei^ORCID,Alharthi Bader,Grant Perry C.,Grant Joshua M.,Mosleh Aboozar,Tran Huong,Du Wei,Mortazavi Mansour,Li Baohua,Naseem Hameed,Yu Shui-Qing

Funder

Air Force Office of Scientific Research (AFOSR)

National Aeronautics and Space Administration (NASA)

National Science Foundation (NSF)

Publisher

The Optical Society

Subject

Electronic, Optical and Magnetic Materials

Reference30 articles.

1. Group IV Photonics: Driving Integrated Optoelectronics

2. Mid-infrared photonics in silicon and germanium

3. Si–Ge–Sn alloys: From growth to applications

4. New classes of Si-based photonic materials and device architectures via designer molecular routes

5. Lasing in direct-bandgap GeSn alloy grown on Si

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1. In situ mass spectrometric investigation to probe GeSn growth dynamics and mechanisms in the chemical vapor deposition processes;Journal of Vacuum Science & Technology B;2024-06-26

2. High performance junctionless FDSOI SiGe channel p-FinFET with high ION/IOFF ratio and excellent SS;Materials Science in Semiconductor Processing;2024-03

3. Deposition of GeSn film on Si substrate by plasma-enhanced chemical vapor deposition using GeCl4 and SnCl4 in H2 for developing short-wave infrared Si photonics;Materials Science in Semiconductor Processing;2023-08

4. Remote plasma-enhanced chemical vapor deposition of GeSn on Si: Material and defect characterization;Journal of Applied Physics;2023-06-15

5. Spark Discharge Synthesis and Characterization of Ge/Sn Janus Nanoparticles;Nanomaterials;2023-05-22

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