Affiliation:
1. Shanghai University of Engineering Science
2. China Academy of Engineering Physics
Abstract
We designed a four-layer structured absorber (Ti-Si-SiO2-Ti) in the ultra-long-wave infrared band. The paper applies the bare Ti-SiO2-Si film to determine the approximate target band of the absorber, and combined with the coupling effect of the top double-ring structure, it greatly enhances the absorber's property, which can make the absorber absorb more than 90% in the range of 14.0-26.3 µm in the ultra-long-wave infrared band. For the complex natural environment in practical applications, the absorber has excellent polarization independence and maintains excellent absorption in the incident environment from 0-60°.
Funder
National Natural Science Foundation of China
Subject
Electronic, Optical and Magnetic Materials
Cited by
1 articles.
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