A dependency of emission efficiency of poly-silicon light-emitting device on avalanching current

Author:

Sun Hongliang,Xu KaikaiORCID,Zhao Jianming,Zhang Jing,Zhou Yong,Liu Lu,Yuan Jun,Huang Lei,Zhu Kunfeng,Snyman Lukas W.,Ogudo Kingsley A.

Funder

the Natural Science Foundation of China

the Department of Science and Technology of Sichuan Province

the Science and Technology on Analog Integrated Circuits Laboratory

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials,Inorganic Chemistry,Organic Chemistry,Physical and Theoretical Chemistry,Spectroscopy

Reference28 articles.

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3. Optical propagation and refraction in silicon complementary metal-oxide-semiconductor structures at 750 nm: toward on-chip optical links and microphotonic systems;Ogudo;J. Nanolithogr. MEMS, MOEMS,2013

4. Silicon LEDs toward high frequency on-chip link;Xu;Optik,2016

5. Si light-emitting device in integrated photonic CMOS ICs;Xu;Opt. Mater.,2017

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