Solution processed thin-film transistors with bilayer channel consisting of ZnO nanoparticles and SnO2

Author:

Gong Zhipeng,Yang ZunxianORCID,Shen Zihong,Qiu Yinglin,Xu Lei,Ye Bingqing,Ye Yuliang,Wu Wenbo,Zhou Yuanqing,Huang Qiaocan,Hong Zeqian,Meng Zongyi,Zeng Zhiwei,Cheng Zhiming,Ye Songwei,Hong Hongyi,Lan Qianting,Li Fushan,Guo Tailiang,Wang Shaohao,Xu Sheng

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials,Inorganic Chemistry,Organic Chemistry,Physical and Theoretical Chemistry,Spectroscopy

Reference52 articles.

1. Transparent and flexible thin-film transistors with high performance prepared at ultralow temperatures by atomic layer deposition;Chen;Adv. Electron. Mater.,2019

2. Metal oxide semiconductor thin-film transistors for flexible electronics;Petti;Appl. Phys. Rev.,2016

3. High-performance flexible transparent thin-film transistors using a hybrid gate dielectric and an amorphous zinc indium tin oxide channel;Liu;Adv. Mater.,2010

4. Stable and high-performance flexible ZnO thin-film transistors by atomic layer deposition;Lin;ACS Appl. Mater. Interfaces,2015

5. Study of the optical properties of TiO2 semiconductor nanoparticles synthesized using Salvia rosmarinus and its effect on photocatalytic activity;Silva-Osuna;Opt. Mater.,2022

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