Solution processed thin-film transistors with bilayer channel consisting of ZnO nanoparticles and SnO2-Reference-Cited by-同舟云学术

Solution processed thin-film transistors with bilayer channel consisting of ZnO nanoparticles and SnO2

Published:2022-06 Issue: Volume:128 Page:112401
ISSN:0925-3467
Container-title:Optical Materials
language:en
Short-container-title:Optical Materials

Author:

Gong Zhipeng,Yang Zunxian^ORCID,Shen Zihong,Qiu Yinglin,Xu Lei,Ye Bingqing,Ye Yuliang,Wu Wenbo,Zhou Yuanqing,Huang Qiaocan,Hong Zeqian,Meng Zongyi,Zeng Zhiwei,Cheng Zhiming,Ye Songwei,Hong Hongyi,Lan Qianting,Li Fushan,Guo Tailiang,Wang Shaohao,Xu Sheng

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials,Inorganic Chemistry,Organic Chemistry,Physical and Theoretical Chemistry,Spectroscopy

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1. Verifying the physical role of upper-active-layer on charge transport together with bias stability in bilayer-channel oxide thin-film transistors;Surfaces and Interfaces;2024-08

2. Dual Role of AgNO₃ as an Oxidizer and Chloride Remover toward Enhanced Combustion Synthesis of Low-Voltage and Low-Temperature Amorphous Rare Metal-Free Oxide Thin-Film Transistors;ACS Applied Electronic Materials;2024-01-09

3. Heterojunction oxide thin film transistors: a review of recent advances;Journal of Materials Chemistry C;2023