Investigations of morphology, purity and crystal defects of the InN pillar crystals prepared by means of halide chemical vapor deposition under atmospheric pressure-Reference-Cited by-同舟云学术

Investigations of morphology, purity and crystal defects of the InN pillar crystals prepared by means of halide chemical vapor deposition under atmospheric pressure

Published:2004-07 Issue:7 Volume:65 Page:1259-1263
ISSN:0022-3697
Container-title:Journal of Physics and Chemistry of Solids
language:en
Short-container-title:Journal of Physics and Chemistry of Solids

Author:

Takahashi Naoyuki,Niwa Arei,Nakamura Takato

Publisher

Elsevier BV

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Reference12 articles.

1. GaN, AlN, and InN: A review

2. Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes

3. Continuous‐wave operation of InGaN multi‐quantum‐well‐structure laser diodes at 233 K

4. Synthesis of Gallium Nitride Nanorods Through a Carbon Nanotube-Confined Reaction

5. Growth of Self-Organized GaN Nanostructures on $\bf Al_{2}O_{3}(0001)$ by RF-Radical Source Molecular Beam Epitaxy

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