Synchrotron-radiation photoemission study of the ultrathin Ba/3C–SiC(111) interface-Reference-Cited by-同舟云学术

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Synchrotron-radiation photoemission study of the ultrathin Ba/3C–SiC(111) interface

Published:2016-03 Issue: Volume:90 Page:40-44
ISSN:0022-3697
Container-title:Journal of Physics and Chemistry of Solids
language:en
Short-container-title:Journal of Physics and Chemistry of Solids

Author:

Kukushkin S.А.,Benemanskaya G.V.,Dementev P.A.,Timoshnev S.N.,Senkovskiy B.

Funder

Russian Science Foundation

Publisher

Elsevier BV

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Reference39 articles.

1. A new method for the synthesis of epitaxial layers of silicon carbide on silicon owing to formation of dilatation dipoles

2. Theory and practice of SiC growth on Si and its applications to wide-gap semiconductor films

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Nanoscale Single-Crystal Silicon Carbide on Silicon and Unique Properties of This Material;Inorganic Materials;2021-12

2. A New Type of Carbon Nanostructure on a Vicinal SiС(111)-8° Surface;Technical Physics Letters;2019-03

3. Photoelectric Properties of GaN Layers Grown by Plasma-Assisted Molecular-Beam Epitaxy on Si(111) Substrates and SiC/Si(111) Epitaxial Layers;Semiconductors;2019-02

4. Carbon-Based Aromatic-Like Nanostructures on the Vicinal SiC Surfaces Induced by Ba Adsorption;ECS Journal of Solid State Science and Technology;2019

5. CARBON-BASED NANOSTRUCTURE CREATED BY Ba AND Cs ATOMIC LAYER DEPOSITION ON THE VICINAL 3C-SiC(111) SURFACES;MATER PHYS MECH;2017

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