Prediction of lattice constant in cubic perovskites
Author:
Publisher
Elsevier BV
Subject
Condensed Matter Physics,General Materials Science,General Chemistry
Reference21 articles.
1. Substrates for gallium nitride epitaxy;Liu;Mater. Sci. Eng. R,2002
2. Growth of group III nitrides. A review of precursors and techniques;Neumayer;Chem. Mater.,1996
3. Heteroepitaxial technologies of III–V on Si;Kawanami;Sol. Energy Mater. Sol. Cells,2001
4. A Review of III–V–semiconductor based metal-insulation-semiconductor Structure and devices;Mui;Thin Solid Films,1993
5. New buffer sublayers for heteroepitaxial III–V nitride films on sapphire substrates;Kotelyanskii;Tech. Phys. Lett.,2000
Cited by 294 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Insight into the improved thermoelectric and optoelectronic performances of CsZnCl3-aYa (Y=C, N and a = 0, 1) halide perovskite for UV absorber and energy applications;Materials Science and Engineering: B;2024-12
2. Fabrication, structure, and physical properties of three-B-site perovskite Ba(Zr1–2xTixCex)O3;Journal of Alloys and Compounds;2024-11
3. Analysis of cubic perovskite oxide AgNbO3 under stress conditions: Potential for photovoltaic and high-temperature applications - A DFT study;Materials Science in Semiconductor Processing;2024-11
4. A DFT investigation of Li substitution in CsCaY3 (Y F, Cl, Br) having admirable optoelectronic characteristics as a viable candidate for photocatalytic water splitting;International Journal of Hydrogen Energy;2024-10
5. Structural, electronic, optical and thermoelectric properties of LaMO3 (M = Ga or In) cubic perovskites: DFT study;Modern Physics Letters B;2024-08-29
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3