1. Acheson A G 1892 Br. Pat. 17911
2. Intrinsic SiC/SiO2 interface states;Afanasev;Phys. Status Solidi (a),1997
3. Temperature dependence of Fowler–Nordheim current in 6H- and 4H-SiC MOS capacitors;Agarwal;IEEE Electron Device Lett.,1997
4. Prospects for development of SiC power devices;Baliga,1996
5. Comparison of 6H-SiC, 3C-SiC, and Si for power devices;Bhatnagar;IEEE Trans. Electron Devices,1993