Donor-doped Gd2Ti2O7 as a semiconductor-type oxygen sensor

Author:

Kosacki Igor,Tuller Harry L.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Metals and Alloys,Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation,Electronic, Optical and Magnetic Materials

Reference7 articles.

1. Defect Structure and Electrical Properties of Single-Crystal Ba0.03Sr0.97TiO3

2. Flexible control of ionic and electronic conduction in pyrochlore oxides;Tuller,1993

3. M. P. Pechini, US Patent No. 3 330 697, 1967.

4. Ionic Conduction in the Gd2Ti2O7-Gd2Zr2O7 system;Moon;Solid State Ionics,1988

5. Non-stoichiometry and electrical transport in Gd2(Til−xNBx)2O7;Kosacki;Proc. 4th Int. Symp. Systems with Fast Ion Transport, Warsaw, Poland,1994

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