Gas-sensing characteristics of ZnO-NiO junction structures with intervening ultrathin SiO2 layer-Reference-Cited by-同舟云学术

Gas-sensing characteristics of ZnO-NiO junction structures with intervening ultrathin SiO2 layer

Published:1993-06 Issue:1-3 Volume:14 Page:598-599
ISSN:0925-4005
Container-title:Sensors and Actuators B: Chemical
language:en
Short-container-title:Sensors and Actuators B: Chemical

Author:

Suga Kazuo,Koshizaki Naoto,Yasumoto Katsuya,Smela Elisabeth

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Metals and Alloys,Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation,Electronic, Optical and Magnetic Materials

Reference6 articles.

1. Selective CO gas sensing mechanism with CuO/ZnO heterocontact;Nakamura;J. Electrochem. Soc.,1990

2. Sensing behavior of CuO-loaded SnO2 element for H2S detection;Maekawa;Chem. Lett.,1991

3. Humidity sensing mechanism of thin film CuO/ZnO heterojunction;Ushio;Extended Abst., 52nd Autumn Meet. 1, Jpn. Soc. Appl. Phys., Okayama, Japan,9121991

4. Gas sensing characteristics of sputtered films with junction or multilayer structure;Suga;Proc. 3rd Autumnal Symp., Ceramic Soc. Jpn., Kanazawa, Japan,26281990

5. Effects of insulating layer on gas sensing characteristics of sputtered films with junction or multilayer structure;Suga;Proc. Annual Meet. II, Ceramic Soc. Jpn., Tokyo, Japan,22241991

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