Physical and chemical processes in ISFETs with chalcogenide membranes-Reference-Cited by-同舟云学术

Physical and chemical processes in ISFETs with chalcogenide membranes

Published:1990-01 Issue:1-6 Volume:1 Page:390-394
ISSN:0925-4005
Container-title:Sensors and Actuators B: Chemical
language:en
Short-container-title:Sensors and Actuators B: Chemical

Author:

Tarantov Yu. A.,Vlasov Yu. G.,Mesentsev Yu. A.,Averyanov Y.L.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Metals and Alloys,Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation,Electronic, Optical and Magnetic Materials

Reference6 articles.

1. Development of ISFET using glassy solid electrolytes;Vlasov,1989

2. Yu. G. Vlasov, Yu. A. Tarantov and Yu. A. Mesentsev, pCu-ISFET with a chalcogenide membrane, Abstr. 5th Scentific Session Ion-selective Electrodes, Oct. 9–13, 1988, Matrafüred, Hungary, p. 51

3. Ion-selective chalcogenide glass electrodes;Vlasov;Ion-Selective Electrode Rev.,1987

4. Mechanism of extrinsic conductivity in modified vitreous semiconductors;Averyanov;J. Non-Cryst. Solids,1984

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