Measurement of ultra-thin windows of ion implanted silicon detectors with low energy proton beams-Reference-Cited by-同舟云学术

Measurement of ultra-thin windows of ion implanted silicon detectors with low energy proton beams

Published:1976-07 Issue:1 Volume:136 Page:145-150
ISSN:0029-554X
Container-title:Nuclear Instruments and Methods
language:en
Short-container-title:Nuclear Instruments and Methods

Author:

Grahmann H.,Kalbitzer S.

Publisher

Elsevier BV

Subject

General Medicine

Reference29 articles.

1. The Window Thickness of Diffused Junction Detectors

2. The fabrication of high quality silicon junction detectors by low energy ion implantation

3. An X−Y position sensitive detector

4. Characteristics and Window Thicknesses of Ion Implanted Semiconductor Detectors

5. Window Thickness and Rectifying Process in Surface Barrier Detectors

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1. 3 Semiconductor Detectors;Experimental Techniques in Nuclear Physics;1997-12-31

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3. The application of high energy ion implantation for silicon radiation detectors;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;1996-08

4. Detection of 10–20 keV H+, He+ ions and electrons by planar oxide passivated and ion implanted silicon diodes;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1991-11

5. Ion-implanted Si pn-junction detectors with ultrathin windows;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;1990-03