A universal goniometer for channeling experiments
Author:
Publisher
Elsevier BV
Subject
General Medicine
Reference10 articles.
1. ION IMPLANTATION OF SILICON: I. ATOM LOCATION AND LATTICE DISORDER BY MEANS OF 1.0-MeV HELIUM ION SCATTERING
2. Ion implantation of silicon and germanium at room temperature. Analysis by means of 1.0-MeV helium ion scattering
3. Defect studies in crystals by means of channeling
4. ANALYSIS OF SILICON NITRIDE LAYERS ON SILICON BY BACKSCATTERING AND CHANNELING EFFECT MEASUREMENTS
5. ANALYSIS OF SILICON NITRIDE LAYERS ON SILICON BY BACKSCATTERING AND CHANNELING EFFECT MEASUREMENTS
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1. Ion Implantation;Semiconducting Devices;1976
2. Zinc trace analysis in InSb by proton-induced X-rays;X-Ray Spectrometry;1975-04
3. Ion-induced X-ray spectroscopy as a method to determine the depth distribution of trace elements;Nuclear Instruments and Methods;1975-02
4. Electrical and backscattering measurements of arsenic implanted silicon;Applied Physics;1974-07
5. Backscattering measurements and surface roughness;Nuclear Instruments and Methods;1974-07
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