The effect of dicarboxylic acid stabilizers on tungsten chemical mechanical planarization process-Reference-Cited by-同舟云学术

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The effect of dicarboxylic acid stabilizers on tungsten chemical mechanical planarization process

Published:2024-09 Issue: Volume:697 Page:134436
ISSN:0927-7757
Container-title:Colloids and Surfaces A: Physicochemical and Engineering Aspects
language:en
Short-container-title:Colloids and Surfaces A: Physicochemical and Engineering Aspects

Author:

Pan Deng,Ren Gaoyuan,Zhang Jingwei,Wang Li,Wang Shudong

Funder

Chinese Academy of Sciences Dalian Institute of Chemical Physics

Publisher

Elsevier BV

Reference16 articles.

1. Application of a CMP model to Tungsten CMP[J];Paul;J. Electrochem. Soc.,2001

2. Atomic layer deposition of tungsten using sequential surface chemistry with a sacrificial stripping reaction[J];Klaus;Thin Solid Films,2000

3. Chemical mechanical polishing and electrochemical characteristics of tungsten using mixed oxidizers with hydrogen peroxide and ferric nitrate[J];Seo;Mater. Lett.,2006

4. Electrochemistry of chemical vapor deposited tungsten films with relevance to chemical mechanical polishing[J];Kneer;J. Electrochem. Soc.,1996

5. MultI-objective Optimization of Tungsten CMP slurry for advanced semiconductor manufacturing using a response surface methodology[J];Seo;Mater. Des.,2017

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