Design and fabrication of densely integrated silicon quantum dots using a VLSI compatible hydrogen silsesquioxane electron beam lithography process-Reference-Cited by-同舟云学术

Design and fabrication of densely integrated silicon quantum dots using a VLSI compatible hydrogen silsesquioxane electron beam lithography process

Published:2012-10 Issue: Volume:98 Page:386-390
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Lin Y.P.,Husain M.K.,Alkhalil F.M.,Lambert N.,Perez-Barraza J.,Tsuchiya Y.,Ferguson A.J.,Chong H.M.H.,Mizuta H.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference13 articles.

1. Nanometer-period gratings in hydrogen silsesquioxane fabricated by electron beam lithography

2. 10nm lines and spaces written in HSQ, using electron beam lithography

3. Resists for sub-20-nm electron beam lithography with a focus on HSQ: state of the art

4. Hydrogen silsesquioxane electron beam lithography for ultra-small single electron transistors in silicon on insulator

5. Fine and Large Coulomb Diamonds in a Silicon Quantum Dot

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