Polycrystalline silicon gate originated CMOS device failure investigated by Scanning Spreading Resistance Microscopy-Reference-Cited by-同舟云学术

Polycrystalline silicon gate originated CMOS device failure investigated by Scanning Spreading Resistance Microscopy

Published:2015-07 Issue: Volume:142 Page:40-46
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Doering Stefan^ORCID,Wachowiak Andre,Rochel Markus,Nowak Christian,Hoffmann Marko,Winkler Uwe,Richter Mirco,Roetz Hagen,Eckl Stefan,Mikolajick Thomas

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference22 articles.

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4. Separation of d.c. and a.c. competing effect of polysilicon-gate depletion in deep submicron CMOS circuit performance;Lin;Solid State Electron.,1996

5. Effects of gate depletion and boron penetration on matching of deep submicron CMOS transistors;Tuinhout,1997

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